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64Mb SDRAM
64Mb DDR SDRAM
  128Mb  SDRAM
  128Mb  DDR SDRAM
256Mb DDR SDRAM
Please contact us to request datasheet.
IT256M32SD2
  • Doube data rate quad-bank DDR synchronous DRAM
  • Commands and Address registered on positive edge of system clock
  • Standard LPDDR SDRAM interface using CS/, RAS/, CAS/, and WE/
  • Burst length: 2, 4, or 8 
  • Sequential burst only
  • CAS latency: 2 or 3
  • DQS Data Strobes to synchronize data timing
  • DMs for WRITE mask
  • 8192-cycle refresh, 64ms auto refresh period
  • Partial array self-refresh
  • Temperature compensated self-refresh
  • Deep Power Down
  • Programmable Drive Strength
  • 1.8V DRAM core voltage
  • 1.8, 2.5, or 3.3V I/O voltage
166 Mhz 333 Mbits/sec 5.5 ns 400uA
Configuration 8192-R x 256-C x 32-bit x
4-banks
8192-R x 512-C x 16-bit x
4-banks
Refresh Count 8192 8192
Row Address A[0:12] A[0:12]
Bank Address BA0,1 BA0,1
Column Address A[0:7] A[0:8]

 

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