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64Mb DDR SDRAM
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  128Mb  DDR SDRAM
256Mb DDR SDRAM
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IT128M32SD2

128Mbit Low Power DDR SDRAM,  x16 or x32-bit wide, 1.8V VDD

FEATURES

  • Double data rate quad-bank LP-DDR synchronous DRAM
  • All address and command signals registered on positive edge of system clock
  • Standard DDR SDRAM interface using RAS, CAS, WE and CS
  • Burst length: 2, 4, 8 and full page
  • Sequential burst only
  • CAS latency: 2 or 3
  • DMs for WRITE mask
  • 64ms auto- refresh period
  • 2048-cycle refresh (x32)
  • 4096-cycle refresh, (x16)
  • 1.8V DRAM voltage
  • 1.8V or 2.5V I/O voltage
  • Partial Array Self Refresh
  • Automatic Temperature Compensated Self Refresh
  • Deep power down
  • Programmable Drive Strength

KEY TIMING PARAMETERS

Voltage Clock Data Rate Standby Current
1.8V 166 Mhz 333 Mbit/sec 300 uA
1.8V 133 MHz 266 Mbit/sec 300 uA

CONFIGURATION

Description 128Mb (x32) 128Mb (x16)
Configuration 4096-R x 256-C x 32-bit x
4-banks 		4096-R x 512-C x 16-bit x
4-banks
Refresh Count 4096 4096
Row Address A[0:11] A[0:11]
Bank Address BA0,BA1 BA0,BA1
Column Address A[0:7] A[0:8]

This product is currently under development.  
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